Alinco_DR-430_serv.pdf

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1、DR-430E/T/TE1-5 Service Manual CONTENTS SPECIFICATlONSPARTS LIST 1) General 2RF Unit22-25 2) Transmitter2CPU Unit26-27 3) Receiver2VCO Unit28 CIRCUIT DESCRIPTIONSP Unit28 1) Receiver System3Mechanical Parts29 2) Transmitter System4Packing29 3) PLL Circuit4EMS-5A30 4) Terminal Function of Microproces

2、sor5-6EMS-1130 5) Terminal Connection of.Microprocessor 8EJ19u31 SEMICONDUCTOR DATAEJ20u31 1) AK23419ADJUSTMENT 2) AN78LO5M101 ) Required Test Equipmen32 3) AN8010M102) Adjustment Points32 4) BU4052BF103) Adjustment for DR430T 33 5) LR408721114) Adjustment for DR430E 34 6) M5218FP115) Adjustment for

3、 DR430TE35 7) M56760FP126) Adjustment for DR430TE36 8) MC7808CT137) Adjustment for DR430TE36-1 9) RH5VA32AA-T1138) Adjustment for DR430TE36-2 10) RH5VA45AA-T1139) Adjustment for DR430TE36-3 11) M57788L, M, H14PC BOARD VIEW 12) TK10487MTR151) CPU Unit Side A37 13) X24CO2S8-30152) CPU Unit Side B37 14

4、) uPC1241H153) RF Unit Side A38 15) Transistor, Diode and LED Outline Draw164) RF Unit Side B39 16) LCD Connection175) VCO Unit Side A40 EXPLODED VIEW6) VCO Unit Side B40 1) Bottom View18CIRCUIT DIAGRAM 2) Top, Front View 1191) RF Unit41 3) Top, Front View 2202) CPU Unit42 3) EMS-543 4) EMS-1143 BLO

5、CK DIAGRAM44 NOTICE: When ordering replacement parts, make sure to include the following fourpoints: (1) Parts No. (2) Description (3) Equipment model name (4) Quantity required ALINCO INCORPORATED TWIN 21 M.I.D. TOWER BUILDING 23F, 1-61, 2-CHOME, SHIROMI CHUO-KU , OSAKA, 540-8580 JAPAN Tel (81)6-69

6、46-8150 fax (81)6-6946-8175 e-mail: exportalinco.co.jp SPECIFICATIONS 1) General Frequency Coverage: RX: 430.000 460.000MHz(T version) TX: 440.000 450.000MHz(T version) TX/RX: 430.000 440.000MHz(E version) RX: 400.000 425.000MHz(TE1 version) TX: 400.000 420.000MHz(TE1 version) RX: 445.000 475.000MHz

7、(TE2 version) TX: 450.000 470.000MHz(TE2 version) TX/RX: 430.000 450.000MHz(TE3 version) TX/RX: 470.000 490.000MHz(TE4 version) TX/RX: 490.000 510.000MHz(TE5 version) Frequency Resolution:5, 10, 12.5, 15,20,25kHzsteps Antenna Impedance:50 ohm unbalanced Power Supply Requirements: DC 13.8 +/-10% Volt

8、s DC Current Drain at l3.8V Receiving: Squelched less than 800mA Transmitting: High/10.0A (approx.) Low/3.5A (approx.) Dimensions:140mm(W) x 40mm(H) x 154mm(D) Weight:0.86kg (approx.) 2) Transmitter Output Power:High: 35Watts Low: 5Watts (Approx.) Emission Mode:F3E(FM) Modulation System:Variable Rea

9、ctance Frequency Modulation Max. Frequency Deviation: +/ -5kHz (Wide Version) +/ -2.5kHz (Narrow Version) Spurious Emission:-60dB or below carrier Microphone:Electret Condenser Microphone Operating Mode:Simplex/Semi-Duplex Offset :0ffset from 0 to 15.995MHz 3) Receiver Receiving System:Superheterody

10、ne Dual Conversion Intermediate Frequency:1stIF: 30.85MHz 2nd lF: 455kHz 12dB SINAD less than -16dBu Sensitivity:More than +/-6kHz at -6dB (Wide Version) Selectivity:Less than +/-15kHz at -60dB (Wide Version) Audio Power Output:More than 2.5W 10% Distortion Speaker Impedance:8 ohm Page-2 CIRCUIT DES

11、CRIPTION 1 ) Receiver System 1. Front EndThe signal from the antenna is passed through a low-pass filter and input to the L16. The signal from L16 is led to the gate of Q1. D4 and D17 are the diode limiter circuit against the excessive input power of more than 20dBm. Q1 is the FET which.has two gate

12、s. The voltage of the gate 2 is set higher to get the high gain and sensitivity. The signal from Q1 is led to the band pass filter L5, and gets the high image rejection ratio. The signal is amplified by Q18, and led to the band pass filter L3. 2. Mixer CircuitThe signal from the band pass filter L3

13、is converted into the first IF signal of 30.85MHz. The receiving signal is led to the gate 1 of Q2, and the first local oscillator signal is led to the gate 2 of Q2. To reduce the high adjacent channel interference, the band width of the FL2 is set to 20kHz. The signal from FL2 is amplified by Q8, a

14、nd input to FM IF system IC3 of TK10487. 3. lF CircuitThe TK10487 has the second local oscillator circuit, mixer circuit, detector circuit, squelch circuit, and so on. Pin1 and 2 are the terminals of the crystal oscillator circuit. Pin2 (emitter) is connected to the ground via the resister R108 to p

15、revent the oscillator from decreasing the power at the low tempera- ture. Pin4 of IC3 is connected to FL1 directly because the matching resistor for ceramic filter is built-in. The quadrature circuit (pin10 of IC3) is con- nected to the ceramic resonator X2 for the temperature stability and good qua

16、lity. The signal from pin11 of IC3 is connected to the LPF. The detected AF signal, which has flat frequency characteristics, is led to the control unit and used as both squelch signal and tone squelch signal. De-emphasis circuit consists of R22, R23, C30 and C31. The LPF amplifier consisting of Q5

17、and Q6 is located far away from the VR in the control unit, so it outputs the high voltage signal to prevent S/N from the deterioration. The squelch switch circuit consists of Q4 and Q16, and switches on/off at the point where there is no voltage to prevent from the switching noise. The S meter sign

18、al from pin12 of IC3 is led to the CPU in the control unit after adjusting the level at D16 and VR3. The S meter signal is thermal compensated by TH1 and stabilized. The noise amplifier consists of pin13 and 14, the built-in OP amplifier in IC3. The output signal of noise amplifier is amplified by Q

19、14, rectified by D10, and then led to the pin15 (hysteresis comparator input) of IC3. 4. AF CircuitIC4 is about 5W audio power amplifier IC. When the capacity of pin1 in C82 is increased more, the output incidental noise becomes smaller. The high- pitched tone becomes smaller at the same time. This

20、radios capacity of C82 is determined considering the high-pitched tone. PAGE-3 2) Transmitter System 1. Modulation CircuThe microphone amplifier IC1 (IDC, LPF) consists of two operational amplifi- ers. The signal from the microphone is led to pre-emphasis circuit consisting of C129 and R34 and then

21、to the limiter circuit. The limiter circuit uses the saturation of the OP amplifier. The amplified signal is input to the low-pass filter IC1A. The output signal from the microphone amplifier is passed through variable resistors VR2 for modulation adjustment and input to the VCO unit. Sub tone devia

22、tion is determined by R18, R74 and VR2. The radio does not have the adjustment variable resistor for sub tone deviation. 2. TX Amp. Circuit The signal from VCO is amplified by TX, RX wide band LO amplifier Q19. The signal from Q19 is passed through the transmission/reception selector, and amplified

23、by Q27, Q20 and Q15. The PA unit is driven at 400mW driving power. 3. PA CircuitIC5 is 35W powered amplifier module. The output power is controlled by the voltage of V1. The RF signal amplified 35W in PA is passed through D5 and two-stage transmission/reception low-pass filter, and input to the ante

24、nna connector. 4. ALC CircuitThe power detection circuit consisting of D11 and D12 rectifies the output signal voltage. The detected DC voltage is led to the VR1 (power adjust trimmer), and amplified by Q3, Q9 and Q13. Output power is controlled by voltage of V1 in IC5 and collector voltage of Q15.

25、When the temperature goes up unusually, the power down circuit consisting of R83 and TH2 works to prevent the device from the destruction. 3) PLL CircuitThe VCO unit is designed for the PLL circuit, putting the VCO on one side, and PLL circuit on the other side. Q301 in the VCO is grounded using the

26、 gate oscillator, and its frequency covers 430MHz to 460MHz without transmission/reception shift circuit. IC301 is pulse swallow system based PLL IC with the built-in prescaler, which synthesizes 430MHz-band signal. The loop filter consisting of Q302, Q303 and Q306 is the active type. PAGE-4 4) Term

27、inal Function of Microprocessor Port No. I/O LogicPinName DescriptionPort No. I/O LogicPinName Description 1OSEG19LCDSegment19 Output41OClockCLKClock Output 2OSEG20LCDSegment20 Output42OClockDATDataOutput 3OSEG21LCDSegment21 Output43OClockST1Strobe Output for PLL IC 4OSEG22LCDSegment22 Output44OCloc

28、kST2Strobe Output for CTCSS IC 5OSEG23LCDSegment23 Output45IActive LowSFTShift Key Input 6IGNDAnalogGround 0V46IActive High SDSignal Detection Input 7IVrefReference Voltage Input 5V47OActive High H/LTransmission Power (H: Low Power) 8IVccCPU Power Supply hnput 5V48IActive LowV/MVFO/Memory Key Input

29、9O1750_ToneBurstOutput49IActive LowCALCall Key Input 10OClockBEEPBeepToneOutput50IActive LowCTCCTCSS Mode Set Input 11IActive LowMUPChannel Up Input (Microphone Control)51IActive LowREVReverse Key Input 12IActive LowMDNChannel Down Input (Microphone Control)52IActive LowFNCFunction Key Input 13INoUs

30、eEID53IActive LowMHzMHzKeyInput 14OActive LowSQLSquelch Control (L: Audio is off.)54IActive LowPTTPTTKeyInput 15OActiveHighMUTMicrophone Mute (H: Mic Amp is off.)55ILV3Power Supply Input for LCD 16IActive LowRElRotaryEncoder Input56ILV2Power Supply Input for LCD 17OClockTO3ToneOutput57ILV1Power Supp

31、ly Input for LCD 18OClockTO2ToneOutput58ICOM0LCD Common 0 Output 19OClockTO1ToneOutput59ICOM1LCD Common 1 Output 20OClockTO0ToneOutput60ICOM2LCD Common 2 Output 21IActiveHighXWREEPROM Write Status External Input61INo Use 22IActive LowRE2RotaryEncoder Input62OSEG00LCD Segment 00 Output 23OActive LowB

32、POBand Plan Detection Input (Common)63OSEG01LCD Segment 01 Output 24IActive LowTIDTone Unit Detection Input64OSEG02LCD Segment 02 Output 25IActive LowBUBack Up Signal Detection input65OSEG03LCD Segment 03 Output 26IGNDGround66OSEG04LCD Segment 04 Output 27lActive LowRSTResetInput67OSEG05LCD Segment

33、05 Output 28IXinCrystal Oscillator Terminal (3.58MHz)68OSEG06LCD Segment 06 Output 29OXoutCrystal Oscillator Terminal (3.58MHz)69OSEG07LCD Segment 07 Output 30IGNDGround70OSEG08LCD Segment 08 Output 31IActive LowTDOCTCSS Tone Detection Output71OSEG09LCD Segment 09 Output 32OActive High DTDFor Trunki

34、ng72OSEG10LCD Segment 10 Output 33ONoUse73OSEG11LCD Segment 11 Output 34IActive LowDD4Band Plan 4 (V/U Selection) R286 0-U74OSEG12LCD Segment 12 Output 35IActive LowDD3Band Plan 3 (445/435 Selection) R285 0-44575OSEG13LCD Segment 13 Output 36IActive LowDD2Band Plan 2 (5k/12.5k Selection) R284 0-12.5

35、76OSEG14LCD Segment 14 Output 37IActive LowDD1Band Plan 177OSEG15LCD Segment 15 Output 38IActive LowDD0Band Plan 078IActiveHighULUnlockInput 39OClockSCLClock Output for EEPROM79IAnalogSMSignalMeterInput 40 I/O ClockSDAData Output for EEPROM80OSEG18LCD Segment 18 Output PAGE-5PAGE-6 Page 8 Page 9 Pag

36、e 10 Page 11 Page 12 Page 13 Page 14 Page 15 Page 16 Page 17 AV0001 Page 18 DG0013Z FM0077Z FP0080 DRM03SX ONLY UE0257 AV0001 AV0001 AV0001 AV0001 AV0001 AV0001 ES0017DR430 ONLY DR330 KZ0047Z FF0028 FF0031 (DR430,330 ONLY) Page 19 KS0041CZ NK0010A FF0025 FP0034 FM0152 DR330 DR430 Page 20 KZ0013 DR33

37、0 PARTS LISTMAIN UnitMAIN Unit Ref No Parts No.DescriptionParts NameVerRef No Parts No.Description Parts NameVerRef No Parts No. DescriptionParts NameVerRef No Parts No.DescriptionParts NameVer MAIN UnitC52CU3031Chip C.C1608JB1H471KTAC105CU3002Chip C.C1608CH1H010CTAC155CU3103Chip C.C1608UJ1H150JTA C

38、1CU3035 Chip C.C1608JB1H102KTAC53CU3009Chip C.C1608CH1H080CTAC106CU3002Chip C.C1608CH1H010CTACN1UE0191Connector 11PS-JE C2CU3044 Chip C.C1608JB1H562KTAC54CE0339EIectrolytic.16MV10SW+TSC107CU3035Chip C.C1608JB1H102KTACN2UE0191Connector 11PS-JE C3CU3100 Chip C.C1608JB1C393ZTAC55CE0339EIectrolytic.16MV

39、10SW+TSC108CU8042Chip C.C2012JB1C104KTACN3UE0043Connector PI22AO2M C4CS0049 Chip Tantal TMCSA1C105MTRC56CU3035Chip C.C1608JB1H102KTAC109CS0049Chip TantalTMCSA1C105MTRCN6UE0043Connector PI22AO2M C5CU3044 Chip C.C1608JB1H562KTAC57CU3035Chip C.C1608JB1H102KTAC110CU3035Chip C.C1608JB1H102KTAD1XD0014Diod

40、eM1308 C6CU3031 Chip C.C1608JB1H471KTAC58Chip C.See the Version Table.VerC111CS0049Chip TantalTMCSA1C105MTRD2XD0130DiodeDA204UT106 C112Ceramic C.See the Version Table.VerD3XD0130DiodeDA204UT106 C7CU3031 Chip C.C1608JB1H471KTAC59CU3031Chip C.C1608JB1H471KTAC113Ceramic C.See the Version Table.VerD4XD0

41、129Diode1SS318 TT11 C8CU3001 Chip C.C1608CH1H0R5CTAC60CU3031Chip C.C1608JB1H471KTAC114Ceramic C.See the Version Table.VerD5XD0013DiodeMI407 C9CU3001 Chip C.C1608CH1H0R5CTAC61CU3011Chip C.C1608CH1H100DTAC115Ceramic C.See the Version Table.VerD6XD0254Diode1SS355TT17 C10CU3031 Chip C.C1608JB1H471KTAC62

42、CU3031Chip C.C1608JB1H471KTAC116Ceramic C.See the Version Table.VerD7XD0254Diode1SS355TT17 C11CU3019 Chip C.C1608CH1H470JTAC63CU3003Chip C.C1608CH1H020CTAC117CU3031Chip C.C1608JB1H471KTAD8XD0107DiodeG3B C12CU3031 Chip C.C1608JB1H471KTAC64CU3011Chip C.C1608CH1H100DTAC118CU3031Chip C.C1608JB1H471KTAD9

43、XD0254Diode1SS355TT17 C13CU3031 Chip C.C1608JB1H471KTAC65Chip C.See the Version Table.VerC119CU3013Chip C.C1608CH1H150JTAD10XD0130DiodeDA204UT106 C14CU3031 Chip C.C1608JB1H471KTAC66CE0341EIectrolytic.16MV100HC+TSC120CU3047Chip C.C1608JB1H103KTAD11XD0250DiodeMA742-TX C15CU3031 Chip C.C1608JB1H471KTAC

44、67Chip C.See the Version Table.VerC121CU3047Chip C.C1608JB1H103KTAD12XD0250DiodeMA742-TX C16CU3031 Chip C.C1608JB1H471KTAC68CU3039Chip C.C1608JB1H222KTAC122CE0339Electrolytic.C 16MV 10SW+TSD13XD0136DiodeDTZ5.1ATT11 C17CU3031 Chip C.C1608JB1H471KTAC69CU3035Chip C.C1608JB1H102KTAC123Ceramic C.See the

45、Version Table.VerD14XD0257DiodeRN711H C18CU3031 Chip C.C1608JB1H471KTAC70CU3031Chip C.C1608JB1H471KTAC124CU3011Chip C.C1608CH1H100DTAD15XD0257DiodeRN711H C19CS0232 Chip Tantal TMCMA1V474MTRC71CU3031Chip C.C1608JB1H471KTAC125CE0339Electrolytic.C 16MV 10SW+TSD16XD0145DiodeDTZ2.2ATTl1 C20CU3059 Chip C.

46、C1608JF1E104ZTAC72CE0339EIectrolytic.16MV10SW+TSC126CU3031Chip C.C1608JB1H471KTAD17XD0129Diode1SS318 TT11 C21CU3059 Chip C.C1608JF1E104ZTAC73CU3031Chip C.C1608JB1H471KTAC128Chip C.See the Version Table.VerFL1XC0001FilterCFW455Fwide C22CU3047 Chip C.C1608JB1H103KTAC74CU3031Chip C.C1608JB1H471KTAC129C

47、U3047Chip C.C1608JB1H103KTAXC0017FilterCFW455GNarrow C23CU3059 Chip C.C1608JF1E104ZTAC75CU3031Chip C.C1608JB1H471KTAC130CU3019Chip C.C1608CH1H470JTAFL2XF0014Filter30.85MHz 30.M15B9wide C24CU3031 Chip C.C1608JB1H471KTAC76CU3019Chip C.C1608CH1H470JTAC132CU3004Chip C.C1608CH1H030CTAXF0031ZFilter30.85MH

48、z 30.M7BNarrow C25CU3035 Chip C.C1608JB1H102KTAC77CU3011Chip C.C1608CH1H100DTAwideC133CU3031Chip C.C1608JB1H471KTAIC1XA0068ICM5218FP-TO1 -1 C26CU3028 Chip C.C1608CH1H271KTACU3057Chip C.C1608CH1H130JTANarrowC134CU3019Chip C.C1608CH1H470JTAIC2XA0082ICMC7808CT C27CU3047 Chip C.C1608JB1H103KTAC78CU3031C

49、hip C.C1608JB1H471KTAC135CU3019Chip C.C1608CH1H470JTAIC3XA0144ICTK10487M C28CU3059 Chip C.C.1608JF1E104ZTAC79CU3005Chip C.C1608CH1H040CTAC136CU3019Chip C.C1608CH1H470JTAIC4XA0079ICuPCl241H C29CU3102 Chip C.C1608JB1C333KTAC81CE0337EIectrolytic.50MV2R2SW+TSC137CU3031Chip C.C1608JB1H471KTAIC5XA0077AICM57788M-E (T/E) C30CU3047 Chip C.C1608JB1H103KTAC82CU3102Chip C.C1608JB1C333KTAC138CU3031Chip C.C1608JB1H471KTAIC5XA0262ICM57788H (TE2) C31CU3049 Chip C.C1608JB1E153KTAC83CE0339EIectrolytic.16MV10SW+TSC139CU3031Chip C.C1608JB1H47