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1、RadioFans.CN 收音机爱 好者资料库 RadioFans.CN 收音机爱 好者资料库 2SC2412K / 2SC4081 / 2SC4617 / Transistors 2SC5658 / 2SC1740S General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S !Features 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029
2、/ 2SA933AS. ! ! ! !Structure Epitaxial planar type NPN silicon transistor ! ! ! !External dimensions (Units : mm) ROHM : VMT3 2SC5658 ROHM : SPT EIAJ : SC-72 2SC1740S (1) Emitter (2) Collector (3) Base 30.2(15Min.) 40.220.2 0.45 0.5 0.45 5 (1)(2) (3) 0.05 +0.15 +0.15 0.05 2.5+0.4 0.1 3Min. * Denotes
3、 hFE 2SC2412K2SC4617 ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416 Abbreviated symbol: B* ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 2SC4081 Abbreviated symbol: B* Abbreviated symbol: B* (1) Base (2) Emitter (3) Collector ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 Abbreviated symbol: B* (1) Emitter (2) Base
4、 (3) Collector Each lead has same dimensions 0.8 0.15 00.1 0.3Min. 1.1 (2)(1) 2.8 1.6 0.4 (3) 1.9 0.95 0.95 (1) Emitter (2) Base (3) Collector Each lead has same dimensions 1.25 2.1 0.3 0.15 00.1 0.1Min. (3) 0.9 0.7 0.2 0.65 (2) 2.0 1.3 (1) 0.65 (1) Emitter (2) Base (3) Collector 0.7 0.15 0.1Min. 0.
5、55 00.1 0.2 1.6 1.6 1.0 0.3 0.8 (2) 0.50.5 (3) 0.2 (1) 00.1 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.40.4 1.2 0.80.2 0.15Max. 0.2 (2) (1) ! ! ! !Absolute maximum (Ta=25C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature
6、Storage temperature Parameter VCBO VCEO VEBO PC Tj Tstg 60V V V A W C C 50 7 0.15IC 0.2 0.15 0.3 2SC2412K, 2SC4081 2SC1740S 2SC4617, 2SC5658 150 55+150 SymbolLimitsUnit 2SC2412K / 2SC4081 / 2SC4617 / Transistors 2SC5658 / 2SC1740S ! ! ! !Electrical characteristics (Ta=25C) Collector-base breakdown v
7、oltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance ParameterSymbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 120 180 2 0.1 0.1 5
8、60 0.4 3.5 VIC=50A IC=1mA IE=50A VCB=60V VEB=7V VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE=2mA, f=100MHz VCE=12V, IE=0A, f=1MHz V V A A V MHz pF Typ.Max.UnitConditions Transition frequency ! ! ! !Packaging specifications and hFE Package Code TapingBulk Basic ordering unit (pieces) T146T106 30003000 Q
9、RS hFE QRS 2SC2412K 2SC4081 TL 3000 T2L 8000 QRS2SC4617 TP 5000 QRS2SC5658 QRS2SC1740S Type hFE values are classified as follows : ItemQRS hFE120270180390270560 ! ! ! !Electrical characterristic curves Fig.1 Grounded emitter propagation characteristics 0 0.1 0.2 0.5 2 20 50 0.20.40.60.81.01.21.41.6
10、1 5 10 Ta=100C VCE=6V COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) 25C 55C Fig.2 Grounded emitter output characteristics ( ) 0 20 40 60 80 100 0.40.81.21.62.00 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 0.05mA 0.10mA 0.15mA 0.25mA 0.30mA 0.35mA 0.20mA Ta=25C
11、IB=0A 0.40mA 0.50mA 0.45mA 0 0 2 8 10 481216 4 6 20 IB=0A Ta=25C COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 3A 6A 9A 12A 15A 18A 21A 24A 27A 30A Fig.3 Grounded emitter output characteristics ( ) 2SC2412K / 2SC4081 / 2SC4617 / Transistors 2SC5658 / 2SC1740S 0.2 20 10 0.512510
12、2050 100 200 50 100 200 500 VCE=5V 3V 1V Ta=25C Fig.4 DC current gain vs. collector current ( ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 0.20.512510 2050 100 200 20 10 50 100 200 500 25C 55C Ta=100C VCE=5V Fig.5 DC current gain vs. collector current ( ) DC CURRENT GAIN : hFE COLLECTOR CURRE
13、NT : IC (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current 0.2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5125102050 100 200 IC/IB=50 20 10 Ta=25C Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.2 CO
14、LLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5125102050 100 200 IC/IB=10 Ta=100C 25C 55C Fig.8 Collector-emitter saturation voltage vs. collector current () COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) 0.2 0.01 0.02 0.0
15、5 0.1 0.2 0.5 0.5125102050 100 IC/IB=50 Ta=100C 25C 55C Fig.9 Gain bandwidth product vs. emitter current 50 0.5125102050 100 100 200 500 Ta=25C VCE=6V EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs
16、. emitter-base voltage COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 0.20.5125102050 1 2 5 10 20 Cob Ta=25C f=1MHz IE=0A IC=0A Cib Fig.11 Base-collector time constant vs. emitter current 0.20.512510 BASE COLLECTOR TIME CONSTANT : Ccrbb (ps) EMITTER CURRENT : IE (mA) 10 20 50 100 200 Ta=25C f=32MHZ VCB=6V This datasheet has been download from: Datasheets for electronics components.